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sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 1 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive dual n-channel 12 v (d-s) 175 c mosfets features ? trenchfet ? power mosfet ? aec-q101 qualified d ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. f. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary n-channel 1 n-channel 2 v ds (v) 12 12 r ds(on) ( ) at v gs = 10 v 0.0065 0.0033 r ds(on) ( ) at v gs = 4.5 v 0.0093 0.0045 i d (a) 20 60 configuration dual n package powerpak ? so-8l dual asymmetric powerpak ? s o-8l dual asymmetric bottom view 2 g 1 3 s 2 4 g 2 1 s 1 d 2 d 1 top view 1 6.15 mm 5 .13 mm 1 6.1 5 m m 5 13 m m n-channel 1 mosfet d 1 g 1 s 1 n-channel 2 mosfet d 2 g 2 s 2 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol n-channel 1 n-channel 2 unit drain-source voltage v ds 12 12 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 20 60 a t c = 125 c 20 60 continuous source curre nt (diode conduction) i s 20 a 44 pulsed drain current b i dm 80 180 single pulse avalanche current l = 0.1 mh i as 18 18 single pulse avalanche energy e as 16.2 16.2 mj maximum power dissipation b t c = 25 c p d 27 48 w t c = 125 c 9 16 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol n-channel 1 n-channel 2 unit junction-to-ambient pcb mount c r thja 85 85 c/w junction-to-case (drain) r thjc 5.5 3.1
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 2 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 1 12 - - v v gs = 0 v, i d = 250 a n-ch 2 12 - - gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1 1 1.5 2 v ds = v gs , i d = 250 a n-ch 2 1 1.5 2 gate-source leakage i gss v ds = 0 v, v gs = 20 v n-ch 1 - - 100 na n-ch 2 - - 100 zero gate voltage drain current i dss v gs = 0 v v ds = 12 v n-ch 1 - - 1 a v gs = 0 v v ds = 12 v n-ch 2 - - 1 v gs = 0 v v ds = 12 v, t j = 125 c n-ch 1 - - 50 v gs = 0 v v ds = 12 v, t j = 125 c n-ch 2 - - 50 v gs = 0 v v ds = 12 v, t j = 175 c n-ch 1 - - 500 v gs = 0 v v ds = 12 v, t j = 175 c n-ch 2 - - 500 on-state drain current a i d(on) v gs = 10 v v ds 5 v n-ch 1 20 - - a v gs = 10 v v ds 5 v n-ch 2 30 - - drain-source on-state resistance a r ds(on) v gs = 10 v i d = 15 a n-ch 1 - 0.0052 0.0065 v gs = 10 v i d = 20 a n-ch 2 - 0.0025 0.0033 v gs = 10 v i d = 15 a, t j = 125 c n-ch 1 - 0.0075 - v gs = 10 v i d = 20 a, t j = 125 c n-ch 2 - 0.0031 - v gs = 10 v i d = 15 a, t j = 175 c n-ch 1 - 0.0085 - v gs = 10 v i d = 20 a, t j = 175 c n-ch 2 - 0.0038 - v gs = 4.5 v i d = 13 a n-ch 1 - 0.0075 0.0093 v gs = 4.5 v i d = 18 a n-ch 2 - 0.0034 0.0045 forward transconductance b g fs v ds = 10 v, i d = 15 a n-ch 1 - 49 - s v ds = 10 v, i d = 20 a n-ch 2 - 91 - dynamic b input capacitance c iss v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 1 - 777 975 pf v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 2 - 2018 2525 output capacitance c oss v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 1 - 539 675 v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 2 - 1313 1645 reverse transfer capacitance c rss v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 1 - 270 340 v gs = 0 v v ds = 6 v, f = 1 mhz n-ch 2 - 683 855 total gate charge c q g v gs = 10 v v ds = 6 v, i d = 20 a n-ch 1 - 14.5 22 nc v gs = 10 v v ds = 6 v, i d = 60 a n-ch 2 - 35.9 54 gate-source charge c q gs v gs = 10 v v ds = 6 v, i d = 20 a n-ch 1 - 1.7 - v gs = 10 v v ds = 6 v, i d = 60 a n-ch 2 - 4.1 - gate-drain charge c q gd v gs = 10 v v ds = 6 v, i d = 20 a n-ch 1 - 2.1 - v gs = 10 v v ds = 6 v, i d = 60 a n-ch 2 - 4.3 - gate resistance r g f = 1 mhz n-ch 1 1.3 2.6 4 n-ch 2 0.5 1.1 1.7
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 3 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit turn-on delay time c t d(on) v dd = 6 v, r l = 0.3 i d ? 20 a, v gen = 10 v, r g = 1 n-ch 1 - 8.8 13.5 ns v dd = 6 v, r l = 0.1 i d ? 60 a, v gen = 10 v, r g = 1 n-ch 2 - 10.7 16.5 rise time c t r v dd = 6 v, r l = 0.3 i d ? 20 a, v gen = 10 v, r g = 1 n-ch 1 - 3.2 5 v dd = 6 v, r l = 0.1 i d ? 60 a, v gen = 10 v, r g = 1 n-ch 2 - 4.5 7 turn-off delay time c t d(off) v dd = 6 v, r l = 0.3 i d ? 20 a, v gen = 10 v, r g = 1 n-ch 1 - 20 30 v dd = 6 v, r l = 0.1 i d ? 60 a, v gen = 10 v, r g = 1 n-ch 2 - 28 42 fall time c t f v dd = 6 v, r l = 0.3 i d ? 20 a, v gen = 10 v, r g = 1 n-ch 1 - 2.6 4 v dd = 6 v, r l = 0.1 i d ? 60 a, v gen = 10 v, r g = 1 n-ch 2 - 5 8 source-drain diode ratings and characteristics b pulsed current a i sm n-ch 1 - - 80 a n-ch 2 - - 180 forward voltage v sd i f = 10 a, v gs = 0 v n-ch 1 - 0.8 1.2 v i f = 20 a, v gs = 0 v n-ch 2 - 0.8 1.2
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 4 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transconductance capacitance gate charge 0 10 20 30 40 50 0 2 4 6 8 10 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 8 16 24 32 40 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.00 0.00 0.00 0.01 0.01 0.01 0 10 20 30 40 50 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 14 28 42 56 70 0 3 6 9 12 15 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 300 600 900 1200 1500 0 2 4 6 8 10 12 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 6 v i d = 20a
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 5 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature safe operating area 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c - 1.3 - 0.9 - 0.5 - 0.1 0.3 0.7 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 15 a v gs = 4.5 v v gs = 10 v 0.00 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 11 12 13 14 15 16 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s ( on ) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s , 10 s , dc i d limited
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 6 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the graph: - normalized transient thermal impedance junction-to-ambient (25 c) is given for general guidelines only to enable the user to get a ball park indication of part capabilities. th e data are extr acted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 10 -1 10 -4 1 2 1 0.1 0.01 0.2 0.1 0.05 pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 single
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 7 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transconductance capacitance gate charge 0 16 32 48 64 80 0 2 4 6 8 10 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 9 18 27 36 45 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.000 0.001 0.002 0.003 0.004 0.005 0 10 20 30 40 50 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 24 48 72 96 120 0 4 8 12 16 20 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 600 1200 1800 2400 3000 0 2 4 6 8 10 12 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 6 v i d = 60a
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 8 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature safe operating area 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c - 1.3 - 0.9 - 0.5 - 0.1 0.3 0.7 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 4.5 v v gs = 10 v 0.000 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 12 13 14 15 16 17 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s ( on ) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 m s , 1 s , 10 s , dc i d limited
sqj202ep www.vishay.com vishay siliconix s15-2474-rev. a, 19-oct-15 9 document number: 62926 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the graph: - normalized transient thermal impedance junction-to-ambient (25 c) is given for general guidelines only to enable the user to get a ball park indication of part capabilities. th e data are extr acted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62926 . 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 10 -1 10 -4 1 2 1 0.1 0.01 0.2 0.1 0.05 pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 single
ordering information www.vishay.com vishay siliconix revision: 01-jul-16 1 document number: 65804 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l ordering codes for the sq rugged series po wer mosfets in the powerpak so-8l package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqj200ep - sqj200ep-t1_ge3 sqj202ep - sqj202ep-t1_ge3 sqj401ep sqj401ep-t1-ge3 sqj401ep-t1_ge3 sqj402ep sqj402ep-t1-ge3 sqj402ep-t1_ge3 sqj403eep sqj403eep-t1-ge3 sqj403eep-t1_ge3 sqj403ep - sqj403ep-t1_ge3 sqj410ep sqj410ep-t1-ge3 sqj410ep-t1_ge3 sqj412ep sqj412ep-t1-ge3 sqj412ep-t1_ge3 sqj416ep - sqj416ep-t1_ge3 sqj418ep - sqj418ep-t1_ge3 sqj422ep sqj422ep-t1-ge3 sqj422ep-t1_ge3 sqj423ep - sqj423ep-t1_ge3 sqj431ep sqj431ep-t1-ge3 sqj431ep-t1_ge3 sqj443ep sqj443ep-t1-ge3 sqj443ep-t1_ge3 SQJ444EP - SQJ444EP-t1_ge3 sqj446ep - sqj446ep-t1_ge3 sqj456ep sqj456ep-t1-ge3 sqj456ep-t1_ge3 sqj457ep - sqj457ep-t1_ge3 sqj459ep - sqj459ep-t1_ge3 sqj460aep - sqj460aep-t1_ge3 sqj461ep sqj461ep-t1-ge3 sqj461ep-t1_ge3 sqj463ep sqj463ep-t1-ge3 sqj463ep-t1_ge3 sqj465ep sqj465ep-t1-ge3 sqj465ep-t1_ge3 sqj469ep sqj469ep-t1-ge3 sqj469ep-t1_ge3 sqj474ep - sqj474ep-t1_ge3 sqj476ep - sqj476ep-t1_ge3 sqj479ep - sqj479ep-t1_ge3 sqj486ep sqj486ep-t1-ge3 sqj486ep-t1_ge3 sqj488ep sqj488ep-t1-ge3 sqj488ep-t1_ge3 sqj500aep sqj500aep-t1-ge3 sqj500aep-t1_ge3 sqj840ep sqj840ep-t1-ge3 sqj840ep-t1_ge3 sqj844aep sqj844aep-t1-ge3 sqj844aep-t1_ge3 sqj850ep sqj850ep-t1-ge3 sqj850ep-t1_ge3 sqj858aep sqj858aep-t1-ge3 sqj858aep-t1_ge3 sqj868ep - sqj868ep-t1_ge3 sqj886ep sqj886ep-t1-ge3 sqj886ep-t1_ge3 sqj910aep sqj910aep-t1-ge3 sqj910aep-t1_ge3 sqj912aep sqj912aep-t1-ge3 sqj912aep-t1_ge3 sqj940ep sqj940ep-t1-ge3 sqj940ep-t1_ge3 sqj942ep sqj942ep-t1-ge3 sqj942ep-t1_ge3 sqj951ep sqj951ep-t1-ge3 sqj951ep-t1_ge3 sqj952ep - sqj952ep-t1_ge3 sqj956ep sqj956ep-t1-ge3 sqj956ep-t1_ge3 sqj960ep sqj960ep-t1-ge3 sqj960ep-t1_ge3 sqj963ep sqj963ep-t1-ge3 sqj963ep-t1_ge3 sqj968ep sqj968ep-t1-ge3 sqj968ep-t1_ge3 sqj980aep sqj980aep-t1-ge3 sqj980aep-t1_ge3 sqj992ep sqj992ep-t1-ge3 sqj992ep-t1_ge3
package information www.vishay.com vishay siliconix c14-0057-rev. d, 07-apr-14 1 document number: 62714 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l assymetric case outline note ? millimeters will govern dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 0.06 0.13 0.000 0.003 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.04 0.12 0.20 0.002 0.005 0.008 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.63 3.73 3.83 0.143 0.147 0.151 d3 0.81 0.91 1.01 0.032 0.036 0.040 d4 1.98 2.08 2.18 0.078 0.082 0.086 d5 1.47 1.57 1.67 0.058 0.062 0.066 e 1.20 1.27 1.34 0.047 0.050 0.053 e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 2.75 2.85 2.95 0.108 0.112 0.116 e3 1.89 1.99 2.09 0.074 0.078 0.082 f 0.05 0.12 0.19 0.002 0.005 0.007 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.41 0.51 0.61 0.016 0.020 0.024 k1 0.64 0.74 0.84 0.025 0.029 0.033 k2 0.54 0.64 0.74 0.021 0.025 0.029 w 0.13 0.23 0.33 0.005 0.009 0.013 w1 0.31 0.41 0.51 0.012 0.016 0.020 w2 2.72 2.82 2.92 0.107 0.111 0.115 w3 2.86 2.96 3.06 0.113 0.117 0.120 w4 0.41 0.51 0.61 0.016 0.020 0.024 5 10 12 5 10 12 dwg: 6009 pin 1 pin 1 0.25 gauge line b3 k2 a1 k1 d4 d3 d5 b2 d1 d e d2 b b1
pad pattern www.vishay.com vishay siliconix revision: 07-mar-13 1 document number: 64477 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pads for powerpak ? so-8l dual asymmetric recommended minimum pad s dimen s ion s in mm [inche s ]
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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